features x built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit) x the bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. they also have the advantage of almost completely eliminating parasitic effects x only the on/off conditions need to be set for operation, making device design easy parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current-continuous i c 100 ma collector dissipation p c 200 mw junction temperature t j 150 : storage temperature range t stg -55~150 : electrical characteristics sym parameter min typ max unit v (br)cbo collector-base breakdown voltage (i c =50ua, i e =0) 50 --- --- v v (br)ceo collector-emitter breakdown voltage (i c =1ma, i b =0) 50 --- --- v v (br)ebo emitter-base breakdown voltage (i e =50ua, i c =0) 5 --- --- v i cbo collector cut-off current (v cb =50v, i e =0) --- --- 0.5 ua i ebo emitter cut-off current (v eb =4v, i c =0) h fe dc current gain (v ce =5v, i c =1ma) 100 300 600 --- v ce(sat) collector-emitter saturation voltage ( --- --- 0.3 v f t transition frequency (v =10v, i =5ma, f=100mhz) --- 250 --- mhz --- --- 0.5 ua r 1 input resistance 3.29 4.7 6.11 k sot-323 suggested solder pad layout 1.90 0.70 0.90 0.65 0.65 absolute maximum ratings epoxy meets ul 94 v-0 flammability rating moisure sensitivity level 1 marking: 03 mm 2012- 0 willas electronic corp. npn digital transistor DTC143TUA dimensions in inches and (millimeters) ce e i c =5ma,i b =0.25ma i c =5ma,i b =0.25ma ) .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15)
typical characteristics dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 ta=100c 25c ?40c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta=100c 25c ?40c l c /l b =20 fig.2 collector-emitter saturation voltage vs. collector current 2012- 0 willas electronic corp. npn digital transistor DTC143TUA
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